SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 20 V 5.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6)
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 4-WLCSP (1.6x1.6) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
| Qualification | - |
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