SI8424DB-T1-E1
MOSFET N-CH 8V 12.2A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8424DB-T1-E1, an N-Channel TrenchFET® MOSFET, offers 8V drain-source voltage and a continuous drain current of 12.2A at 25°C (Tc). This device features a low Rds(on) of 31mOhm at 1A, 4.5V, and a maximum gate charge of 33nC at 5V. The input capacitance (Ciss) is a maximum of 1950pF at 4V. Designed for surface mount applications, it utilizes a 4-Microfoot (4-XFBGA, CSPBGA) package and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 2.78W (Ta) and 6.25W (Tc). This component is suitable for power management and switching applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.78W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 4 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
