SI8417DB-T2-E1
MOSFET P-CH 12V 14.5A 6MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI8417DB-T2-E1 is a P-Channel TrenchFET® Power MOSFET designed for efficient power management. This component features a drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 14.5A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 21mOhm maximum at 1A and 4.5V Vgs. With a gate charge (Qg) of 57nC maximum at 5V and input capacitance (Ciss) of 2220pF maximum at 6V Vds, it offers optimized switching performance. The SI8417DB-T2-E1 is housed in a compact 6-Micro Foot™ (1.5x1) CSP package, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in high-performance computing, portable electronics, and automotive applications. The device supports drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage (Vgs) of ±8V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-MICRO FOOT®CSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 6.57W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-Micro Foot™ (1.5x1) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2220 pF @ 6 V |