SI8415DB-T1-E1
MOSFET P-CH 12V 5.3A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8415DB-T1-E1 P-Channel TrenchFET® MOSFET. This device features a 12V drain-source voltage and 5.3A continuous drain current at 25°C. The Rds(on) is specified at a maximum of 37mOhm at 1A, 4.5V, with drive voltages ranging from 1.8V to 4.5V. It offers a maximum power dissipation of 1.47W and a gate charge (Qg) of 30nC at 4.5V. The component is housed in a 4-Microfoot (4-XFBGA, CSPBGA) package for surface mounting. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in various applications within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
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