SI8413DB-T1-E1
MOSFET P-CH 20V 4.8A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8413DB-T1-E1 is a P-Channel MOSFET from the TrenchFET® series. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.8A at 25°C (Ta). The Rds(on) is specified at a maximum of 48mOhm at 1A and 4.5V Vgs. It requires a gate-source voltage (Vgs) threshold of 1.4V (max) at 250µA and can handle a Vgs up to ±12V. Drive voltages for optimal Rds(on) are 2.5V and 4.5V. The device offers a maximum power dissipation of 1.47W (Ta) and operates within a temperature range of -55°C to 150°C (TJ). This surface-mount component is housed in a 4-Microfoot package, specifically a 4-XFBGA, CSPBGA, delivered on tape and reel. This MOSFET is commonly utilized in power management and switching applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
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