SI8405DB-T1-E3
MOSFET P-CH 12V 3.6A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8405DB-T1-E3 TrenchFET® P-Channel MOSFET, offering a 12V drain-source voltage and a continuous drain current of 3.6A at 25°C (Ta). This surface mount device features a low Rds(on) of 55mOhm at 1A, 4.5V, and a gate charge of 21 nC at 4.5V. The 4-Microfoot package (4-XFBGA, CSPBGA) is suitable for applications requiring compact footprint and efficient thermal management, with a maximum power dissipation of 1.47W (Ta). Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management and switching applications across various industries, including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |