SI8404DB-T1-E1
MOSFET N-CH 8V 12.2A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8404DB-T1-E1 is an N-Channel MOSFET from the TrenchFET® series. This device features a Vds of 8 V and a continuous drain current (Id) of 12.2 A at 25°C (Tc). The Rds On is a maximum of 31 mOhm at 1 A, 4.5 V, with drive voltages ranging from 1.8 V to 4.5 V. Key parameters include a gate charge (Qg) of 33 nC at 5 V and input capacitance (Ciss) of 1950 pF at 4 V. Power dissipation is rated at 2.78 W (Ta) and 6.25 W (Tc). The component is housed in a 4-Microfoot (4-XFBGA, CSPBGA) package suitable for surface mounting and operates within a temperature range of -55°C to 150°C. This MOSFET is utilized in applications such as power management and battery-powered devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.78W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 4 V |
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