SI8402DB-T1-E1
MOSFET N-CH 20V 5.3A 2X2 4-MFPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number SI8402DB-T1-E1, is a 20V device designed for efficient switching applications. This N-Channel MOSFET features a low on-resistance of 37mOhm maximum at 1A, 4.5V Vgs, and a continuous drain current of 5.3A (Ta) at 25°C. The gate charge is specified at 26 nC maximum at 4.5V Vgs, with a threshold voltage of 1V maximum at 250µA. The SI8402DB-T1-E1 is housed in a compact 4-Microfoot (4-XFBGA, CSPBGA) package, suitable for surface mount configurations. This component is widely utilized in power management solutions for consumer electronics, industrial automation, and automotive systems. The product is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
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