SI8401DB-T1-E3
MOSFET P-CH 20V 3.6A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SI8401DB-T1-E3, from the TrenchFET® series, offers a 20V drain-to-source voltage (Vdss) and a continuous drain current of 3.6A at 25°C. This surface mount component features a low on-resistance of 65mOhm at 1A and 4.5V Vgs. Designed for efficient power management, it supports gate drive voltages from 2.5V to 4.5V with a maximum gate charge of 17nC at 4.5V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.47W. The 4-Microfoot package (4-XFBGA, CSPBGA) is supplied on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial power control.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
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