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SI8401DB-T1-E1

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SI8401DB-T1-E1

MOSFET P-CH 20V 3.6A 4MICROFOOT

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix presents the SI8401DB-T1-E1, a P-Channel TrenchFET® MOSFET designed for high-efficiency power switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 3.6A at 25°C (Ta). The device exhibits a low on-resistance of 65mOhm maximum at 1A and 4.5V Vgs, optimized by its advanced TrenchFET® technology. With a maximum power dissipation of 1.47W (Ta) and a gate charge of 17 nC at 4.5V, it is suitable for demanding power management tasks. The SI8401DB-T1-E1 is supplied in a compact 4-Microfoot (4-XFBGA, CSPBGA) surface mount package, ideal for space-constrained designs. Its operating temperature range of -55°C to 150°C (TJ) ensures robust performance across various environmental conditions. This MOSFET is commonly employed in power supplies, battery management systems, and automotive electronics.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFBGA, CSPBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)1.47W (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device Package4-Microfoot
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V

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