SI7888DP-T1-GE3
MOSFET N-CH 30V 9.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7888DP-T1-GE3, a TrenchFET® series N-Channel Power MOSFET, features a 30V drain-to-source voltage rating. This device offers a continuous drain current of 9.4A at 25°C with a maximum power dissipation of 1.8W under the same conditions. The Rds(On) is specified at a maximum of 12mOhm at 12.4A and 10V gate-source voltage. Drive voltages range from 4.5V to 10V. Key characteristics include a maximum gate charge of 10.5 nC at 5V and a gate threshold voltage of 2V at 250µA. Operating temperature range is -55°C to 150°C. The component is housed in a PowerPAK® SO-8 surface mount package, supplied on tape and reel. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 12.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 5 V |
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