SI7886ADP-T1-GE3
MOSFET N-CH 30V 15A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI7886ADP-T1-GE3 is a TrenchFET® series N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C (Ta). The low on-resistance (Rds On) of 4mOhm is achieved at 25A and 10V gate-to-source voltage (Vgs), with a drive voltage range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 60 nC at 4.5V and an input capacitance (Ciss) of 6450 pF at 15V. This MOSFET is housed in a PowerPAK® SO-8 surface mount package, offering a maximum power dissipation of 1.9W (Ta). It is suitable for use in automotive, industrial, and consumer electronics sectors requiring efficient power management. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
