SI7882DP-T1-GE3
MOSFET N-CH 12V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI7882DP-T1-GE3, features a 12 V drain-source breakdown voltage and a continuous drain current of 13 A at 25°C (Ta). This device offers a maximum on-resistance of 5.5 mOhm at 17 A and 4.5 V gate-source voltage. The MOSFET is packaged in a PowerPAK® SO-8 surface-mount configuration, designed for efficient thermal management with a power dissipation of 1.9 W at 25°C (Ta). Key electrical parameters include a gate charge (Qg) of 30 nC at 4.5 V and a threshold voltage (Vgs(th)) of 1.4 V at 250 µA. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive, industrial, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 17A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |