SI7882DP-T1-E3
MOSFET N-CH 12V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI7882DP-T1-E3, offers a 12V drain-source voltage rating and a continuous drain current capability of 13A at 25°C. This device features a low on-resistance of 5.5mOhm at 17A and 4.5V Vgs, optimized for efficiency. The PowerPAK® SO-8 package provides enhanced thermal performance with a maximum power dissipation of 1.9W. Key specifications include a gate charge of 30 nC at 4.5V Vgs and a threshold voltage of 1.4V at 250uA. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial, and power management systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 17A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
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