SI7866ADP-T1-GE3
MOSFET N-CH 20V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI7866ADP-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This device features a maximum drain-source voltage of 20 V and a continuous drain current of 40 A at 25°C (Tc). With a low on-resistance of 2.4 mOhm at 20 A and 10 V, it minimizes conduction losses. The MOSFET is housed in a PowerPAK® SO-8 surface mount package, offering excellent thermal performance with a maximum power dissipation of 83 W at 25°C (Tc). Key electrical characteristics include a gate charge of 125 nC at 10 V and an input capacitance of 5415 pF at 10 V. This component is suitable for use in automotive, industrial power supplies, and battery management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5415 pF @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
