SI7866ADP-T1-E3
MOSFET N-CH 20V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, 20V, 40A continuous drain current (Tc), SI7866ADP-T1-E3. This TrenchFET® series device features a low Rds(on) of 2.4mOhm at 20A and 10V Vgs, with a maximum gate charge of 125 nC at 10V. The N-Channel MOSFET is housed in a PowerPAK® SO-8 package, suitable for surface mounting. Key electrical parameters include a Vgs(th) of 2.2V at 250µA and ±20V maximum Vgs. Power dissipation is rated at 5.4W (Ta) and 83W (Tc). This component is utilized in demanding applications within the automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5415 pF @ 10 V |
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