SI7862ADP-T1-GE3
MOSFET N-CH 16V 18A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7862ADP-T1-GE3 is an N-Channel TrenchFET® Power MOSFET. This device features a 16V drain-source breakdown voltage and a continuous drain current of 18A at 25°C ambient temperature, with a maximum power dissipation of 1.9W. The low on-resistance is 3mOhm at 29A and 4.5V Vgs. Operating from a gate drive voltage of 2.5V to 4.5V, it offers a typical gate charge of 80 nC at 4.5V. The input capacitance (Ciss) is rated at a maximum of 7340 pF at 8V Vds. Designed for surface mounting in the PowerPAK® SO-8 package, this MOSFET operates across a temperature range of -55°C to 150°C. It finds application in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 29A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7340 pF @ 8 V |
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