SI7862ADP-T1-E3
MOSFET N-CH 16V 18A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SI7862ADP-T1-E3 is an N-Channel TrenchFET® MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 16V and a continuous Drain Current (Id) of 18A at 25°C. Its low on-resistance is specified at 3mOhm maximum at 29A, 4.5V drive. The device is housed in a PowerPAK® SO-8 package, optimized for efficient heat dissipation with a maximum power dissipation of 1.9W. Key electrical characteristics include a Gate Charge (Qg) of 80 nC at 4.5V and an Input Capacitance (Ciss) of 7340 pF at 8V. This MOSFET is suitable for applications requiring high current density and low conduction losses, commonly found in automotive, industrial, and consumer electronics sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 29A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7340 pF @ 8 V |
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