SI7860DP-T1-GE3
MOSFET N-CH 30V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7860DP-T1-GE3 is a TrenchFET® series N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The low on-resistance, specified at 8mOhm maximum at 18A and 10V Vgs, minimizes conduction losses. With a gate charge (Qg) of 18nC maximum at 4.5V Vgs, it facilitates fast switching performance. The MOSFET is housed in a PowerPAK® SO-8 surface mount package, offering excellent thermal dissipation with a maximum power dissipation of 1.8W at 25°C. It operates over an extended temperature range of -55°C to 150°C. This component is suitable for use in power supplies, voltage regulators, and motor control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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