SI7860ADP-T1-GE3
MOSFET N-CH 30V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7860ADP-T1-GE3 is a 30V N-Channel Power MOSFET in a PowerPAK® SO-8 package. This device offers a continuous drain current of 11A (Ta) at 25°C and a maximum power dissipation of 1.8W (Ta). Key electrical characteristics include a low on-resistance of 9.5mOhm at 16A and 10V, and a gate charge of 18nC at 4.5V. It is designed for efficient operation with drive voltages between 4.5V and 10V, and features a maximum gate-source voltage of ±20V. The SI7860ADP-T1-GE3 is suitable for applications in power management, consumer electronics, and industrial automation. Operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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