SI7860ADP-T1-E3
MOSFET N-CH 30V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI7860ADP-T1-E3, offers a 30V drain-to-source voltage and 11A continuous drain current at 25°C (Ta). This device features a low on-resistance of 9.5mOhm at 16A and 10V Vgs, achieved through advanced TrenchFET technology. The PowerPAK® SO-8 package provides efficient thermal performance with 1.8W maximum power dissipation (Ta) and a wide operating temperature range of -55°C to 150°C (TJ). Designed for surface mounting, it supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 18 nC at 4.5V. Its robust construction and performance characteristics make it suitable for applications in power management, automotive, and industrial systems. The SI7860ADP-T1-E3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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