SI7858ADP-T1-GE3
MOSFET N-CH 12V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7858ADP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 12V drain-source breakdown voltage and supports a continuous drain current of 20A at 25°C ambient temperature, with a maximum power dissipation of 1.9W. The low on-resistance of 2.6mOhm at 29A and 4.5V gate drive voltage, coupled with a low gate charge of 80nC at 4.5V, ensures minimal conduction and switching losses.
The Vishay Siliconix SI7858ADP-T1-GE3 is housed in a PowerPAK® SO-8 surface mount package, facilitating compact and robust board designs. Its operating temperature range of -55°C to 150°C (TJ) makes it suitable for demanding environments. This MOSFET is commonly utilized in power management solutions, consumer electronics, and automotive applications requiring efficient power control. The device is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 29A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 6 V |
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