SI7858ADP-T1-E3
MOSFET N-CH 12V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7858ADP-T1-E3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 1.9W. The low on-resistance of 2.6mOhm at 29A and 4.5V Vgs, coupled with a gate charge (Qg) of 80 nC at 4.5V, facilitates efficient switching performance.
The device utilizes a PowerPAK® SO-8 package for optimal thermal management and board space utilization, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). Key electrical parameters include Ciss of 5700 pF at 6V and a Vgs(th) of 1.5V at 250µA. Drive voltages range from 2.5V to 4.5V. The SI7858ADP-T1-E3 is commonly employed in automotive, industrial, and consumer electronics power management systems. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 29A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 6 V |
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