SI7856ADP-T1-GE3
MOSFET N-CH 30V 15A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI7856ADP-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 15A (Ta) at 25°C. With a maximum on-resistance (Rds On) of 3.7mOhm at 25A and 10Vgs, it offers low conduction losses. The MOSFET is housed in a PowerPAK® SO-8 package, facilitating efficient heat dissipation with a maximum power dissipation of 1.9W (Ta). Optimized for gate drive voltages as low as 4.5V, it supports efficient switching. The typical gate charge (Qg) is 55 nC at 4.5V, enabling faster switching speeds. Operating across a wide temperature range of -55°C to 150°C (TJ), this component is suitable for use in power supplies, battery management systems, and automotive electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V |
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