SI7852ADP-T1-GE3
MOSFET N-CH 80V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7852ADP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features an 80V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C (Tc). The device exhibits a low on-resistance of 17mOhm maximum at 10A and 10V, optimized for reduced conduction losses. It is housed in a PowerPAK® SO-8 surface-mount package, offering excellent thermal performance with a maximum power dissipation of 62.5W at 25°C (Tc). Key parameters include a gate charge (Qg) of 45 nC maximum at 10V and input capacitance (Ciss) of 1825 pF maximum at 40V. This MOSFET is suitable for applications in industrial and automotive power management systems. It operates across a wide temperature range from -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1825 pF @ 40 V |
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