SI7852ADP-T1-E3
MOSFET N-CH 80V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7852ADP-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features an 80V drain-source breakdown voltage and a continuous drain current rating of 30A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 17mOhm at 10A and 10V, it minimizes conduction losses. The device offers a low gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 1825pF at 40V, facilitating efficient switching performance. The SI7852ADP-T1-E3 is housed in a PowerPAK® SO-8 surface-mount package, providing a robust thermal solution with a maximum power dissipation of 5W (Ta) and 62.5W (Tc). Operating across a junction temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications in automotive, industrial, and computing sectors. Drive voltages range from 8V to 10V for optimal Rds(on) performance.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1825 pF @ 40 V |
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