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SI7852ADP-T1-E3

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SI7852ADP-T1-E3

MOSFET N-CH 80V 30A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7852ADP-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features an 80V drain-source breakdown voltage and a continuous drain current rating of 30A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 17mOhm at 10A and 10V, it minimizes conduction losses. The device offers a low gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 1825pF at 40V, facilitating efficient switching performance. The SI7852ADP-T1-E3 is housed in a PowerPAK® SO-8 surface-mount package, providing a robust thermal solution with a maximum power dissipation of 5W (Ta) and 62.5W (Tc). Operating across a junction temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications in automotive, industrial, and computing sectors. Drive voltages range from 8V to 10V for optimal Rds(on) performance.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1825 pF @ 40 V

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