SI7850ADP-T1-GE3
MOSFET N-CH 60V 10.3A/12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7850ADP-T1-GE3 is a N-Channel Power MOSFET from the TrenchFET® Gen IV series. This component features a 60V drain-to-source voltage (Vdss) and supports continuous drain current of 10.3A at 25°C ambient and 12A at 25°C case temperature. With a maximum on-resistance (Rds On) of 19.5mOhm at 10A and 10V Vgs, it is designed for efficient power switching applications. The device offers a maximum power dissipation of 3.6W (Ta) and 35.7W (Tc). Key parameters include a gate charge (Qg) of 17 nC (max) at 10V Vgs and input capacitance (Ciss) of 790 pF (max) at 30V Vds. It is supplied in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
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