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SI7840BDP-T1-E3

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SI7840BDP-T1-E3

MOSFET N-CH 30V 11A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel, 30V, 11A continuous drain current (Ta) in a PowerPAK® SO-8 package. The SI7840BDP-T1-E3 features a low Rds(on) of 8.5mOhm at 16.5A and 10V Vgs, with a threshold voltage of 3V at 250µA and a gate charge of 21 nC at 4.5V. This TrenchFET® series component supports a maximum Vgs of ±20V and operates within a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 1.8W (Ta). This device is suitable for applications in power management and automotive sectors. The component is supplied in Tape & Reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs8.5mOhm @ 16.5A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V

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