SI7818DN-T1-GE3
MOSFET N-CH 150V 2.2A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7818DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 150V drain-source breakdown voltage and offers a continuous drain current of 2.2A at 25°C with a maximum power dissipation of 1.5W. The on-resistance (Rds On) is specified at a maximum of 135mOhm at 3.4A and 10V gate drive. Key parameters include a gate charge (Qg) of 30nC at 10V and a threshold voltage (Vgs(th)) maximum of 4V at 250µA. The device supports a gate-source voltage range of ±20V and operates efficiently with drive voltages of 6V or 10V. Packaged in a surface-mount PowerPAK® 1212-8, this MOSFET is suitable for use in industrial, automotive, and consumer electronics sectors requiring robust power switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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