SI7810DN-T1-E3
MOSFET N-CH 100V 3.4A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel SI7810DN-T1-E3 is a 100V device featuring TrenchFET® technology. This N-Channel power MOSFET offers a continuous drain current of 3.4A (Ta) and a maximum power dissipation of 1.5W (Ta). The Rds On is specified at 62mOhm maximum at 5.4A and 10V. It is supplied in a PowerPAK® 1212-8 package for surface mounting, presented on a tape and reel. Key specifications include a gate charge of 17 nC at 10V and a gate-source voltage range of ±20V. The threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. This component is suitable for applications in the industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
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