SI7804DN-T1-GE3
MOSFET N-CH 30V 6.5A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7804DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 6.5A at 25°C ambient. With a maximum Rds(on) of 18.5mOhm at 10A and 10V Vgs, it offers low conduction losses. The device is housed in a compact PowerPAK® 1212-8 surface-mount package, enabling efficient thermal management with a maximum power dissipation of 1.5W. Operating across a wide temperature range of -55°C to 150°C (TJ), it is suitable for power management, automotive, and industrial applications requiring robust switching performance. Key parameters include a gate charge of 13 nC at 5V Vgs and a threshold voltage of 1.8V at 250µA.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
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