SI7802DN-T1-GE3
MOSFET N-CH 250V 1.24A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® series N-Channel MOSFET, part number SI7802DN-T1-GE3. This device features a 250 V drain-to-source voltage and a continuous drain current of 1.24 A at 25°C ambient. The Rds(On) is specified as 435 mOhm maximum at 1.95 A and 10 V gate drive. Maximum power dissipation is 1.5 W at 25°C ambient. Gate charge is 21 nC maximum at 10 V. The operating temperature range is -55°C to 150°C. This component is housed in a PowerPAK® 1212-8 surface-mount package, supplied on tape and reel. It is suitable for applications in industrial and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.24A (Ta) |
| Rds On (Max) @ Id, Vgs | 435mOhm @ 1.95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |