SI7794DP-T1-GE3
MOSFET N-CH 30V 28.6A/60A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SkyFET®, TrenchFET® Gen III N-Channel MOSFET, part number SI7794DP-T1-GE3, offers a 30V drain-source breakdown voltage and a continuous drain current of 28.6A at 25°C ambient or 60A at 25°C case temperature. This device features a low 3.4mOhm maximum Rds(on) at 20A and 10V Vgs, with a gate charge of 72nC maximum at 10V Vgs. The N-Channel MOSFET utilizes TrenchFET® Gen III technology and includes an integrated Schottky diode. Power dissipation is rated at 5W ambient and 48W case. The component is housed in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suited for applications in automotive, industrial, and power management systems requiring high efficiency and robust performance.
Additional Information
Series: SkyFET®, TrenchFET® Gen IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28.6A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 20A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 15 V |
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