SI7792DP-T1-GE3
MOSFET N-CH 30V 40.6A/60A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7792DP-T1-GE3 is an N-Channel Power MOSFET from the SkyFET® and TrenchFET® Gen III series. This component features a 30V drain-source voltage rating and offers continuous drain current capability of 40.6A at ambient temperature and 60A at case temperature. With a maximum Rds(on) of 2.1mOhm at 20A and 10V, it is designed for high-efficiency power conversion. The device includes an integrated Schottky diode for improved body diode characteristics. The SI7792DP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 6.25W (Ta) and 104W (Tc). It is suitable for applications in automotive, industrial power supplies, and high-performance computing.
Additional Information
Series: SkyFET®, TrenchFET® Gen IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40.6A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4735 pF @ 15 V |
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