SI7790DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7790DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, housed in a PowerPAK® SO-8 package. This device offers a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). The low on-resistance (Rds On) of 4.5mOhm is achieved at 15A and a 10V gate-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 95 nC maximum at 10V Vgs and an input capacitance (Ciss) of 4200 pF maximum at 20V Vds. With a maximum power dissipation of 69W at 25°C (Tc), this component is suitable for demanding applications in sectors such as automotive and industrial power management. The operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |
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