SI7784DP-T1-GE3
MOSFET N-CH 30V 35A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7784DP-T1-GE3 is a TrenchFET® N-Channel MOSFET designed for high-efficiency power management. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 6mOhm maximum at 20A and 10V, optimized for minimal conduction losses. Its PowerPAK® SO-8 package offers excellent thermal performance, with a maximum power dissipation of 5W (Ta) and 27.7W (Tc). Key parameters include a gate charge (Qg) of 45nC maximum at 10V and input capacitance (Ciss) of 1600pF maximum at 15V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive, industrial, and computing sectors requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 27.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |