SI7774DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7774DP-T1-GE3 is a N-Channel Power MOSFET from the SkyFET® and TrenchFET® series. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc). The MOSFET features a low on-resistance of 3.8mOhm maximum at 15A and 10V Vgs. It is housed in a PowerPAK® SO-8 package for efficient surface mounting. Key electrical parameters include a gate charge (Qg) of 66 nC maximum at 10V Vgs and input capacitance (Ciss) of 2630 pF maximum at 15V Vds. Power dissipation is rated at 5W (Ta) and 48W (Tc). This component is suitable for applications in automotive, industrial, and power supply markets.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2630 pF @ 15 V |
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