SI7748DP-T1-GE3
MOSFET N-CH 30V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7748DP-T1-GE3 is a 30V N-Channel Power MOSFET from the SkyFET® and TrenchFET® series. This component is designed for high-efficiency power switching applications, featuring a low Rds(on) of 4.8mOhm at 15A and 10V Vgs. It offers a continuous drain current of 50A at 25°C (Tc) and a maximum power dissipation of 56W at 25°C (Tc). The device is housed in a compact PowerPAK® SO-8 package for effective thermal management in surface-mount designs. Key parameters include a gate charge of 92 nC (max) and input capacitance of 3770 pF (max). It operates across a temperature range of -55°C to 150°C (TJ). Typical applications include automotive, industrial power supplies, and battery management systems.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 1mA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 15 V |