SI7718DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7718DN-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, packaged in a PowerPAK® 1212-8 for surface mounting. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 35A at 25°C (Tc) with a thermal resistance (Tc) that supports up to 52W of power dissipation. The on-resistance (Rds On) is specified at a maximum of 6mOhm at 10A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 45 nC (max) at 10V and an input capacitance (Ciss) of 1600 pF (max) at 15V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in power management, battery charging, and general-purpose switching found in consumer electronics and industrial automation. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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