SI7674DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI7674DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). Optimized for efficient power handling, it offers a low on-resistance of 3.3mOhm at 20A and 10V (Vgs), with a maximum power dissipation of 83W (Tc). The device utilizes Vishay's advanced MOSFET technology and is packaged in a surface-mount PowerPAK® SO-8, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 5910 pF at 15V. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in sectors such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5910 pF @ 15 V |
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