SI7674DP-T1-E3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number SI7674DP-T1-E3, is a 30V device packaged in a PowerPAK® SO-8. This surface mount component offers a continuous drain current of 40A at 25°C (Tc) and a low on-resistance of 3.3mOhm maximum at 20A and 10V Vgs. With a gate charge of 90 nC maximum at 10V and input capacitance of 5910 pF maximum at 15V Vds, the SI7674DP-T1-E3 is suitable for applications requiring efficient power switching. The device supports gate-source voltages up to ±20V and exhibits a threshold voltage of 3V maximum at 250µA. Power dissipation is rated at 5.4W (Ta) and 83W (Tc). This Vishay Siliconix component is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5910 pF @ 15 V |
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