SI7668ADP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel SI7668ADP-T1-GE3 is a 30V device in a PowerPAK SO-8 package. This TrenchFET® series component offers a continuous drain current of 40A (Tc). Key parameters include a low Rds(on) of 3mOhm @ 25A, 10V, and a gate charge (Qg) of 170 nC @ 10V. Input capacitance (Ciss) is 8820 pF @ 15V. Drive voltage ranges from 4.5V to 10V, with a maximum gate-source voltage of ±12V. Power dissipation is rated at 5.4W (Ta) and 83W (Tc). Operating temperature spans -55°C to 150°C (TJ). This surface mount device is suitable for applications in automotive, industrial power, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8820 pF @ 15 V |
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