SI7664DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7664DP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 40A (Tc). The TrenchFET® technology ensures low on-resistance, specified at a maximum of 3.1mOhm at 20A and 10V gate-source voltage. The device exhibits a gate charge of 125 nC (max) at 10V Vgs and an input capacitance of 7770 pF (max) at 15V Vds.
Packaged in the PowerPAK® SO-8 surface-mount case, the SI7664DP-T1-GE3 offers excellent thermal performance with a maximum power dissipation of 83W (Tc). It operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics for applications such as power management, DC-DC converters, and motor control. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7770 pF @ 15 V |
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