SI7635DP-T1-GE3
MOSFET P-CH 20V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, TrenchFET® series, part number SI7635DP-T1-GE3. This device features a 20V drain-source breakdown voltage and a continuous drain current of 40A at 25°C (Tc). The low on-resistance is specified at 4.9mOhm maximum at 26A and 10V gate drive. With a maximum gate charge of 143 nC at 10V, this MOSFET offers efficient switching. It is housed in a PowerPAK® SO-8 surface mount package, enabling high power density with a maximum power dissipation of 54W at 25°C (Tc). This component is suitable for applications in automotive, industrial power, and power management systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4595 pF @ 10 V |
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