SI7621DN-T1-GE3
MOSFET P-CH 20V 4A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI7621DN-T1-GE3, offers a 20V drain-to-source voltage rating and a continuous drain current of 4A at 25°C (Tc). This device features a low Rds(on) of 90mOhm maximum at 3.9A and 4.5V Vgs. The PowerPAK® 1212-8 package provides efficient thermal dissipation with a maximum power dissipation of 3.1W (Ta) and 12.5W (Tc). Key parameters include a gate charge of 6.2nC maximum at 5V Vgs and input capacitance of 300pF maximum at 10V Vds. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in consumer electronics and industrial power management. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
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