SI7620DN-T1-GE3
MOSFET N-CH 150V 13A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI7620DN-T1-GE3. This device features a 150V drain-to-source breakdown voltage and a continuous drain current rating of 13A at 25°C case temperature. The PowerPAK® 1212-8 package facilitates efficient thermal management with a maximum power dissipation of 5.2W at 25°C case temperature. Key parameters include a maximum on-resistance of 126mOhm at 3.6A and 10V gate drive, with a typical gate charge of 15 nC at 10V. Designed for demanding applications, this MOSFET is suitable for power conversion, motor control, and battery management systems across industrial and automotive sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 5.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 75 V |
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