SI7615BDN-T1-GE3
MOSFET P-CH 20V 29A/104A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI7615BDN-T1-GE3 is a P-Channel MOSFET designed for power management applications. This component features a 20V drain-to-source breakdown voltage (Vdss) and offers a continuous drain current capability of 29A at ambient temperature (Ta) and 104A at case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 3.8mOhm at 20A and 10V. Power dissipation is rated at 5.2W (Ta) and 66W (Tc).
The MOSFET is housed in a PowerPAK® 1212-8 surface mount package. Key electrical parameters include input capacitance (Ciss) of 4890pF (max) at 10V and gate charge (Qg) of 155nC (max) at 10V. The threshold voltage (Vgs(th)) is 1.5V (max) at 250µA, with a maximum gate-source voltage (Vgs) of ±12V. Operating temperature ranges from -55°C to 150°C. This component is utilized in industries such as consumer electronics and industrial automation. The product is supplied in a Digi-Reel® package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 66W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4890 pF @ 10 V |
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