SI7601DN-T1-GE3
MOSFET P-CH 20V 16A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI7601DN-T1-GE3, offers a 20V drain-source breakdown voltage and continuous drain current capability of 16A at 25°C (Tc). This device features a low on-resistance of 19.2mOhm maximum at 11A and 4.5V Vgs, with a gate charge of 27nC maximum at 5V. The input capacitance (Ciss) is 1870pF maximum at 10V. Designed for efficient power management, it is housed in a surface-mount PowerPAK® 1212-8 package, enabling high power density with a maximum power dissipation of 52W at 25°C (Tc). Suitable for applications in consumer electronics, industrial automation, and automotive systems requiring robust power switching. Operates across a temperature range of -50°C to 150°C (TJ). Supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.2mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 10 V |
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