SI7601DN-T1-E3
MOSFET P-CH 20V 16A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7601DN-T1-E3, offers a 20V drain-to-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). This device features a low on-resistance of 19.2mOhm maximum at 11A and 4.5V Vgs, with a gate drive voltage range of 2.5V to 4.5V. Designed with advanced trench technology, it provides efficient power handling with a maximum power dissipation of 52W at 25°C (Tc). The SI7601DN-T1-E3 is housed in a PowerPAK® 1212-8 surface-mount package and operates across a temperature range of -50°C to 150°C. Key parameters include a gate charge of 27 nC maximum at 5V and input capacitance of 1870 pF maximum at 10V. This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.2mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 10 V |
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