SI7495DP-T1-GE3
MOSFET P-CH 12V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI7495DP-T1-GE3 is a P-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C. Its low on-resistance of 6.5mOhm at 21A and 4.5V Vgs, combined with minimal gate charge (Qg) of 140 nC at 5V, ensures optimized performance and reduced conduction losses. The MOSFET supports drive voltages from 1.8V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V and a threshold voltage (Vgs(th)) of 900mV at 1mA. Packaged in a PowerPAK® SO-8 surface mount configuration, it offers a power dissipation of 1.8W (Ta) and operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 21A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 1mA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
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